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| IIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I III I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I I II II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II II I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II II I I II I IIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII II II I I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II II I I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII * Collector-Emitter Saturation Voltage -- VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc * Collector-Emitter Sustaining Voltage -- VCEO(sus) = 60 Vdc (Min) -- TIP31A, TIP32A VCEO(sus) = 80 Vdc (Min) -- TIP31B, TIP32B VCEO(sus) = 100 Vdc (Min) -- TIP31C, TIP32C * High Current Gain -- Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc * Compact TO-220 AB Package (1) IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 .. (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data Preferred devices are Motorola recommended choices for future use and best overall value. . . . designed for use in general purpose amplifier and switching applications. Complementary Silicon Plastic Power Transistors SEMICONDUCTOR TECHNICAL DATA MOTOROLA THERMAL CHARACTERISTICS *MAXIMUM RATINGS REV 1 Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range Unclamped Inductive Load Energy (1) Total Power Dissipation @ TA = 25_C Derate above 25_C Total Power Dissipation @ TC = 25_C Derate above 25_C Base Current Collector Current -- Continuous Peak Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Characteristic Rating Symbol TJ, Tstg VCEO VCB VEB PD PD IC IB E Symbol RJC RJA TIP31A TIP32A 60 60 - 65 to + 150 TIP318 TIP32B 2.0 0.016 40 0.32 1.0 3.0 5.0 5.0 80 80 32 3.125 62.5 Max TIP31C TIP32C 100 100 _C/W _C/W Watts W/_C Watts W/_C Unit Unit Adc Adc Vdc Vdc Vdc mJ _C 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 - 80 - 100 VOLTS 40 WATTS *Motorola Preferred Device TIP32A TIP32B* TIP32C* TIP31A TIP31B* TIP31C* CASE 221A-06 TO-220AB Order this document by TIP31A/D NPN PNP 3-1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C (1) Pulse Test: Pulse Width ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS 3-2 Vin 0 VEB(off) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) APPROX +11 V Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB = 0) (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) Collector-Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) TURN-ON PULSE APPROX +11 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. Vin t2 TURN-OFF PULSE Current-Gain -- Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) Figure 2. Switching Time Equivalent Circuit t1 v 300 s, Duty Cycle v 2.0%. VCC Vin PD, POWER DISSIPATION (WATTS) TC 10 20 30 40 0 Characteristic 1.0 2.0 3.0 TA 4.0 0 0 RB t, TIME ( s) t3 t1 7.0 ns 100 < t2 < 500 s t3 < 15 ns DUTY CYCLE 2.0% APPROX - 9.0 V Cjd << Ceb RC 20 - 4.0 V 40 Figure 1. Power Derating 60 100 80 T, TEMPERATURE (C) SCOPE TC TA TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C TIP31A, TIP32A TIP31B, TIP31C TIP32B, TIP32C 0.07 0.05 0.03 0.02 0.03 0.1 0.3 0.7 0.5 2.0 1.0 Motorola Bipolar Power Transistor Device Data 120 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) tr @ VCC = 10 V 140 VCEO(sus) VCE(sat) VBE(on) Symbol ICEO IEBO ICES hFE fT hfe tr @ VCC = 30 V 160 Min 60 80 100 3.0 20 25 10 -- -- -- -- -- -- -- -- -- td @ VEB(off) = 2.0 V Max 200 200 200 1.8 1.2 1.0 0.3 0.3 0.3 -- 50 -- -- -- -- -- IC/IB = 10 TJ = 25C Adc MHz Unit Vdc Vdc Vdc -- -- Figure 3. Turn-On Time mAdc mAdc 3.0 TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.01 SINGLE PULSE 0.02 0.05 1.0 0.2 0.5 1.0 D = 0.5 0.2 0.1 0.05 0.02 ZJC(t) = r(t) RJC RJC(t) = 3.125C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 2.0 5.0 t, TIME (ms) 10 20 50 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k Figure 4. Thermal Response 10 IC, COLLECTOR CURRENT (AMP) 5.0 5.0 ms 2.0 1.0 0.5 SECONDARY BREAKDOWN LIMITED @ TJ 150C THERMAL LIMIT @ TC = 25C (SINGLE PULSE) BONDING WIRE LIMIT TIP31A, TIP32A CURVES APPLY TIP31B, TIP32B BELOW RATED VCEO TIP31C, TIP32C 1.0 ms 100 s 0.2 0.1 5.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 5. Active Region Safe Operating Area 3.0 2.0 ts 1.0 t, TIME ( s) 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.03 tf @ VCC = 30 V 300 IB1 = IB2 IC/IB = 10 ts = ts - 1/8 tf TJ = 25C TJ = + 25C 200 CAPACITANCE (pF) tf @ VCC = 10 V 100 Ceb 70 50 Ccb 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 3.0 30 0.1 0.2 0.3 10 0.5 1.0 2.0 3.0 5.0 VR, REVERSE VOLTAGE (VOLTS) 20 30 40 Figure 6. Turn-Off Time Figure 7. Capacitance Motorola Bipolar Power Transistor Device Data 3-3 TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 300 hFE, DC CURRENT GAIN TJ = 150C 25C - 55C VCE = 2.0 V 2.0 TJ = 25C 1.6 IC = 0.3 A 1.0 A 3.0 A 100 70 50 30 1.2 0.8 10 7.0 5.0 0.5 0.7 1.0 0.03 0.05 0.07 0.1 0.3 IC, COLLECTOR CURRENT (AMP) 0.4 3.0 0 1.0 2.0 5.0 10 20 50 100 IB, BASE CURRENT (mA) 200 500 1000 Figure 8. DC Current Gain Figure 9. Collector Saturation Region 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V TJ = 25C V, TEMPERATURE COEFFICIENTS (mV/C) + 2.5 + 2.0 + 1.5 + 1.0 + 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 VB FOR VBE *VC FOR VCE(sat) *APPLIES FOR IC/IB hFE/2 TJ = - 65C TO + 150C 0 0.003 0.005 0.01 0.02 0.03 0.05 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages R BE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) Figure 11. Temperature Coefficients 103 IC, COLLECTOR CURRENT ( A) 102 101 100 10-1 10-2 VCE = 30 V TJ = 150C 107 IC = 10 x ICES IC ICES VCE = 30 V 106 105 104 103 102 20 100C REVERSE 25C ICES 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 FORWARD IC = 2 x ICES (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 40 60 80 100 120 140 160 10-3 - 0.4 - 0.3 - 0.2 - 0.1 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 12. Collector Cut-Off Region Figure 13. Effects of Base-Emitter Resistance 3-4 Motorola Bipolar Power Transistor Device Data TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C PACKAGE DIMENSIONS -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. CASE 221A-06 TO-220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 3-5 TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 3-6 Motorola Bipolar Power Transistor Device Data *TIP31A/D* TIP31A/D |
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